DocumentCode
2341529
Title
Pressure sensors on base of bipolar silicon strain sensitive transistors
Author
Babichev, G.G. ; Kozlovskii, S.I. ; Romanov, V.A.
Author_Institution
Inst. of Semicond., Kiev, Ukraine
fYear
1998
fDate
5-7 Oct 1998
Firstpage
251
Lastpage
254
Abstract
Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption
Keywords
bipolar transistors; elemental semiconductors; pressure sensors; silicon; Si; bipolar silicon strain sensitive transistor; pressure sensor; tensotransistor; Aerospace industry; Anisotropic magnetoresistance; Capacitive sensors; Costs; Physics; Process control; Sensor phenomena and characterization; Silicon; Tensile stress; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730211
Filename
730211
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