RTP of titanium boride for applications in front end processing

Author

Zagozdzon-Wosik, W. ; Ranjit, R. ; Rusakova, I. ; van der Heide, P. ; Zhang, Z. ; Bennett, J.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Houston, TX, USA

fYear

2003

fDate

23-26 Sept. 2003

Firstpage

209

Lastpage

213

Abstract

Titanium boride is used here for contact formation in scaled down devices. Properties of deposited films show strong dependence on electron beam deposition and annealing conditions. Thin TiB₂ films show stable composition in high temperature RTP. Ohmic contacts are formed on p type silicon both by using as deposited and annealed layers. On n-type Si, large thermal budget processes result in dopant outdiffusion and formation of junctions significantly more shallow than in implantation. Recrystallization of TiB₂, observed after high temperature annealing, depends on films deposition conditions and interface perfection. Material characterization techniques including RBS, XPS, SIMS, and TEM are used to explain results of electrical measurement of test structures.

Keywords

Rutherford backscattering; X-ray photoelectron spectra; diffusion; electrical conductivity; elemental semiconductors; ion implantation; ohmic contacts; rapid thermal annealing; recrystallisation; secondary ion mass spectra; silicon; thin films; titanium compounds; transmission electron microscopy; RBS; RTP; SIMS; TEM; TiB₂-Si; XPS; annealing; diffusion; electrical measurement; electron beam deposition; implantation; interface perfection; ohmic contacts; p type silicon; recrystallization; titanium boride; Annealing; Contact resistance; Degradation; Electric resistance; Fabrication; Ohmic contacts; Silicon; Superconducting films; Temperature; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on

Print_ISBN

0-7803-7874-1

Type

conf

DOI

10.1109/RTP.2003.1249150

Filename

1249150