• DocumentCode
    2341622
  • Title

    Transition between coherent to incoherent superlattices transport

  • Author

    Rauch, C. ; Strasser, G. ; Gornik, E.

  • Author_Institution
    Inst. fur Festkorperelektronik, Tech. Univ. Wien, Austria
  • fYear
    1998
  • fDate
    5-7 Oct 1998
  • Firstpage
    267
  • Lastpage
    274
  • Abstract
    Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. A significant decreased of the miniband transmission is observed with increasing electric field across the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is assigned to the transition between coherent and incoherent transport
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor superlattices; tunnelling; GaAs-GaAlAs; GaAs/GaAlAs superlattice; ballistic electron transport; coherent transport; collector current resonance; electric field; electron beam injection; incoherent transport; miniband conduction; three terminal transistor device; transmittance; tunneling barrier; Dispersion; Electron beams; Gallium arsenide; Optical scattering; Particle scattering; Quantum mechanics; Resonance; Superlattices; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
  • Conference_Location
    Smolenice Castle
  • Print_ISBN
    0-7803-4909-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.1998.730215
  • Filename
    730215