DocumentCode
2341622
Title
Transition between coherent to incoherent superlattices transport
Author
Rauch, C. ; Strasser, G. ; Gornik, E.
Author_Institution
Inst. fur Festkorperelektronik, Tech. Univ. Wien, Austria
fYear
1998
fDate
5-7 Oct 1998
Firstpage
267
Lastpage
274
Abstract
Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. A significant decreased of the miniband transmission is observed with increasing electric field across the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is assigned to the transition between coherent and incoherent transport
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor superlattices; tunnelling; GaAs-GaAlAs; GaAs/GaAlAs superlattice; ballistic electron transport; coherent transport; collector current resonance; electric field; electron beam injection; incoherent transport; miniband conduction; three terminal transistor device; transmittance; tunneling barrier; Dispersion; Electron beams; Gallium arsenide; Optical scattering; Particle scattering; Quantum mechanics; Resonance; Superlattices; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730215
Filename
730215
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