The use of microwaves to characterize optically stimulated semiconductors

Author

Brown, H.K.

Author_Institution

Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1990

fDate

11-13 Mar 1990

Firstpage

624

Lastpage

629

Abstract

The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state

Keywords

electron-hole recombination; microwave measurement; semiconductors; waveguide theory; absorption mechanism; decay process; electron-hole-pair concentration; equilibrium state; light pulse; microwave reflection; microwave transmission; optically stimulated semiconductors; wafers; Electromagnetic wave absorption; Maxwell equations; Optical computing; Optical pulse generation; Optical reflection; Optical waveguides; Photonic band gap; Semiconductor device modeling; Semiconductor waveguides; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1990., Twenty-Second Southeastern Symposium on

Conference_Location

Cookeville, TN

ISSN

0094-2898

Print_ISBN

0-8186-2038-2

Type

conf

DOI

10.1109/SSST.1990.138220

Filename

138220