New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices

Author

Vitzcthum, M. ; Streb, Dieter ; Kiesel, Peter ; Kneissl, Michael ; Dohler, Gottfried H.

Author_Institution

Inst. fur Theor. Phys., Erlangen-Nurnberg Univ., Germany

fYear

1998

fDate

5-7 Oct 1998

Firstpage

279

Lastpage

282

Abstract

We report on a new all-optical pump-and-probe technique for the investigation of the fast in-plane ambipolar diffusion process in n-i-p-i doping superlattices. This new technique allows not only the determination of the ambipolar diffusion coefficient but also the spatially resolved investigation of the stationary distribution of the optically induced excess carriers. In our n-i-p-i sample we have measured an ambipolar diffusion coefficient in the range of 10⁴ cm²/s

Keywords

carrier density; diffusion; high-speed optical techniques; semiconductor superlattices; all-optical pump-and-probe technique; ambipolar in-plane diffusion; carrier concentration; n-i-p-i doping superlattice; Charge carrier processes; Diffusion processes; Electron optics; Laser excitation; Optical pumping; Optical sensors; Optical superlattices; Radiative recombination; Semiconductor device doping; Semiconductor superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730217

Filename

730217