Novel plasma enhanced bulk micromachining process for MEMS

In this paper we present a novel single mask bulk silicon micromachining process, for production of micromechanical devices, utilising deep trench cryo plasma etching. The originality of this process lies in secondary effects, such as reactive ion etching-Lag or shadowing, which are used to achieve different depths of etching of different structures on the same wafer. The base of the described technology uses only one-step single-layer lithography and dry etching processes. Therefore, this technology is very simple: (i) no mask alignment procedures are needed, (ii) suitable for batch processes for mass production, and (iii) all processes are compatible with processes used in the Integrated Circuits production