DocumentCode
2341804
Title
A Ku-band frequency converter using 0.25 /spl mu/m PHEMT technology
Author
Virk, R.S. ; Camargo, E. ; Shimizu, H. ; Ichikawa, S.
Author_Institution
Fujitsu Compound Semicond. Inc., San Jose, CA, USA
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
639
Abstract
The design and performance of a Ku-band frequency converter is described for a 0.25 /spl mu/m GaAs pHEMT technology. The 1.0/spl times/1.6 mm/sup 2/ mixer chip provides as low as 4.5 dB up-conversion loss and 7 dB down-conversion loss over the Ku-band where f/sub IF/=1 GHz.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; MMIC mixers; gallium arsenide; 0.25 micron; 4.5 dB; 7 dB; GaAs; GaAs PHEMT technology; Ku-band; down-conversion loss; dual-function MMIC chip; frequency converter; mixer; up-conversion loss; Bandwidth; Coupling circuits; Diodes; Frequency conversion; Gallium arsenide; Impedance matching; Integrated circuit technology; PHEMTs; Radio frequency; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863265
Filename
863265
Link To Document