DocumentCode
2341997
Title
Photovoltaic properties and stability of pentacene-fullerene double heterojunction devices
Author
Wong, Terence K S ; Xu, Yong
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
2008
fDate
24-27 Nov. 2008
Firstpage
155
Lastpage
158
Abstract
The photovoltaic properties of thirty two pentacene (P5) / fullerene (C60) / barthocuproine (BCP) double heterojunction organic photovoltaic devices have been studied as a function of P5 (donor) thickness from 20-76 nm. Both the short circuit current density and power conversion efficiency initially increase with thickness and then decrease for thickness greater than 60 nm. The open circuit voltage and device fill factor showed less variation with P5 thickness. Device characteristics of all devices showed degradation after storage for 20 hours in nitrogen and in darkness. The degradation could not be reversed by thermal annealing in nitrogen and is attributed to exposure to air during initial electrical measurements.
Keywords
boron compounds; fullerene devices; organic semiconductors; photovoltaic cells; BCP; C60; barthocuproine; device fill factor; open circuit voltage; organic photovoltaic devices; pentacene-fullerene double heterojunction devices; photovoltaic properties; photovoltaic stability; power conversion efficiency; thermal annealing; time 20 hour; Business continuity; Circuit stability; Heterojunctions; Nitrogen; Pentacene; Photovoltaic systems; Power conversion; Short circuit currents; Solar power generation; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Sustainable Energy Technologies, 2008. ICSET 2008. IEEE International Conference on
Conference_Location
Singapore
Print_ISBN
978-1-4244-1887-9
Electronic_ISBN
978-1-4244-1888-6
Type
conf
DOI
10.1109/ICSET.2008.4746991
Filename
4746991
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