Title :
Introducing the emitter turn-off thyristor (ETO)
Author :
Li, Yuxin ; Huang, Alex Q. ; Lee, Fred C.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The emitter-turn-off thyristor (ETO) is a hybrid MOS-bipolar high power semiconductor device with the advantages of GTO´s high current/voltage capability and MOS gate control. Its superior control characteristics combined with its high speed, wider RBSOA, higher controllable maximum current, forward current saturation capability, its on-device current sensing and low cost make the ETO the most promising power device in high power, smart control applications. Numerical analysis and experimental demonstration of the ETO are presented in this paper.
Keywords :
MOS-controlled thyristors; MOS gate control; emitter turn-off thyristor; forward current saturation capability; high controllable maximum current; high current/voltage capability; high speed; hybrid MOS-bipolar high power semiconductor device; megawatt MOS-bipolar power device; on-device current sensing; smart control applications; Costs; Current distribution; HVDC transmission; Insulated gate bipolar transistors; Numerical analysis; Power electronics; Power semiconductor devices; Snubbers; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730246
