Design, simulation and realization of high power NPC converters equipped with IGCTs

Author

Zuckerberger, A. ; Suter, E. ; Schaub, Ch ; Klett, A. ; Steimer, P.

Author_Institution

ABB Ind. AG, Turgi, Switzerland

Volume

2

fYear

1998

fDate

12-15 Oct. 1998

Firstpage

865

Abstract

The paper presents the design, simulation and realization of a 6 MVA neutral-point-clamped (NPC) converter equipped with so called integrated gate commutated thyristors (IGCT). The main design target specifications are: reliability, price, efficiency and dynamic behavior. The present topology incorporates special designed power semiconductors capable to hard switch-off snubberless 3.3 kA against a DC link of 2.8 kV at 800 Hz carrier switching frequency. The present converter was simulated by means of two different simulation tools: Saber-circuit simulator and SIMSEN-system simulator. Precise thermal models of the semiconductors were incorporated into the two simulators. Measurements of the switching behavior of the different power semiconductors are also shown.

Keywords

circuit simulation; commutation; power convertors; switching circuits; thyristors; 2.8 kV; 3.3 kA; 6 MVA; 800 Hz; SIMSEN-system simulator; Saber-circuit simulator; carrier switching frequency; design target specifications; dynamic behavior; efficiency; hard switch-off; high power NPC converters; integrated gate commutated thyristors; neutral-point-clamped converter; power semiconductors; precise thermal models; price; reliability; Circuit simulation; Circuit topology; Clamps; Commutation; Inductance; Inverters; Power semiconductor switches; Semiconductor diodes; Switching frequency; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE

Conference_Location

St. Louis, MO, USA

ISSN

0197-2618

Print_ISBN

0-7803-4943-1

Type

conf

DOI

10.1109/IAS.1998.730247

Filename

730247