DocumentCode :
2342137
Title :
A new gate commutated turn-off thyristor and companion diode for high power applications
Author :
Donlon, John F. ; Motto, Eric R. ; Yamamoto, M. ; Iida, Takahiko
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Volume :
2
fYear :
1998
fDate :
12-15 Oct. 1998
Firstpage :
873
Abstract :
Conventional gate turn-off (GTO) thyristors require costly dv/dt and di/dt snubber circuits as well as bulky gate drive circuits. Hard turn off in which all of the main current is commutated to the gate drive circuit with a turn-off gain of one has been looked upon as a way to reduce the dv/dt limitations of the conventional GTO. The new gate commutated turn-off (GCT) thyristor is optimized for this mode and is coupled with a low inductance gate drive circuit to greatly reduce the di/dt limitation and allow operation without a dv/dt snubber. A new soft recovery diode has been developed to provide the capability necessary to apply the superior characteristics of the new GCT in actual application.
Keywords :
commutation; driver circuits; power convertors; power semiconductor diodes; thyristors; di/dt limitation reduction; diode; gate commutated turn-off thyristor; hard turn off; high power applications; low inductance gate drive circuit; soft recovery diode; turn-off gain; Capacitors; Coupling circuits; Current distribution; Diodes; Inductance; Inverters; MOSFETs; Snubbers; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-4943-1
Type :
conf
DOI :
10.1109/IAS.1998.730248
Filename :
730248
Link To Document :
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