Title :
Effect of Intensity Modulated Optical Illumination on the Y Parameters of the GaAs MESFET
Author :
Mishra, B.K. ; Jolly, Lochan
Author_Institution :
EXTC Deptt., T.C.E.T., Mumbai, India
Abstract :
In this paper the effect of an intensity-modulated optical signal on the Y parameters of a MESFET is studied theoretically. It shows that at a constant gate voltage the drain current of the device can be controlled by the intensity of incident optical power density and the frequency of the modulating signal frequency because the Y parameters of the device change with the intensity of incident optical power density and the frequency of the modulating signal.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; frequency modulation; gallium arsenide; integrated optoelectronics; intensity modulation; optical modulation; GaAs; MESFET; Y parameters; drain current; intensity modulated optical illumination; intensity-modulated optical signal; optical power density; optoelectronics; signal frequency modulation; Frequency; Gallium arsenide; Intensity modulation; Lighting; MESFET circuits; Mathematical model; Optical attenuators; Optical devices; Optical modulation; Optical saturation; Optoelectronics; Photodetectors; Photovoltage; Schottky Junction;
Conference_Titel :
Advances in Recent Technologies in Communication and Computing, 2009. ARTCom '09. International Conference on
Conference_Location :
Kottayam, Kerala
Print_ISBN :
978-1-4244-5104-3
Electronic_ISBN :
978-0-7695-3845-7
DOI :
10.1109/ARTCom.2009.155
