DocumentCode
2342195
Title
Integrating world-class radiance RTP technology onto a low cost of ownership production-worthy platform
Author
Boas, Ryan ; Tam, Norman ; Chang, Wen ; Leong, Tim ; Green, Tim
Author_Institution
Appl. Mater. Inc., Santa Clara, CA, USA
fYear
2002
fDate
2002
Firstpage
35
Lastpage
38
Abstract
The Radiance Vantage 300 product offers the production-proven performance of the Radiance 300 mm RTP chamber at a reduced cost of ownership. Tool architecture was developed with the goals of system simplification, shipment improvement, and startup time reduction. These goals were accomplished through designs that preserve the final test tool configuration and a new pre-facilitization concept that allows fab preparation to be completed in parallel with tool manufacture. Reduced system footprint combined with high throughput results in effective fab utilization. Ambient control comparable to that of a cluster tool has been verified through oxygen-sensitive process results. Marathon results for cobalt silicide formation, spike anneal, and emissivity independence are presented and demonstrate the readiness of the newest Applied Materials RTP platform for semiconductor production environments.
Keywords
rapid thermal processing; semiconductor device manufacture; Radiance Vantage 300 platform; ambient control; cobalt silicide formation; emissivity; fab preparation; rapid thermal processing; semiconductor production environments; shipment improvement; spike anneal; startup time reduction; system simplification; test tool configuration; tool manufacture; Annealing; Cobalt; Costs; Manufacturing; Production facilities; Semiconductor device manufacture; Semiconductor materials; Silicides; Testing; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of
Print_ISBN
0-7803-7465-7
Type
conf
DOI
10.1109/RTP.2002.1039437
Filename
1039437
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