DocumentCode
2342216
Title
Rapid isothermal batch processing
Author
Dip, Anthony ; Soave, Robert ; Kaushal, Sanjeev ; Nakao, Ken ; Sasaki, Sadao ; Tsuda, Toshitake
Author_Institution
Tokyo Electron America Inc., Austin, TX, USA
fYear
2002
fDate
2002
Firstpage
39
Lastpage
46
Abstract
Hot-wall batch thermal processing technology offers advantages of true emissivity-independent heating, excellent process uniformity and repeatability, and low cost of ownership (CoO). However, the comparatively long raw process time and queuing time associated with large-batch furnaces is contrary to the requirements of short cycle time manufacturing. In addition, there is concern that the configuration of traditional batch reactors makes it difficult to run complex chemical reactions required for deposition of advanced electronic materials, such as high-k dielectrics. This paper discusses the concept of Rapid Isothermal Batch Processing and presents TELFORMULA, an innovative isothermal hot-wall reactor that is designed to meet the needs of sub-100 nm manufacturing. Also discussed in this work are the cycle-time limiting processing sequences and methods employed in reducing the overhead time to commercially acceptable levels. Advances in component technologies are also presented which include: new ultra-fast heating element, advanced temperature control algorithms, and hardware optimizations for rapid vacuum formation and venting. Data is presented demonstrating the commercial feasibility of the TELFORMULA, along with cycle time performance and film uniformity for conventional films, such as oxides and nitrides, as well as advanced chemistries such as metal and high-k thin films.
Keywords
batch processing (industrial); rapid thermal processing; semiconductor device manufacture; TELFORMULA; advanced temperature control algorithms; commercial feasibility; cost of ownership; cycle-time limiting processing; film uniformity; hot-wall technology; isothermal hot-wall reactor; process uniformity; rapid isothermal batch processing; rapid vacuum formation; repeatability; ultra-fast heating; venting; Chemical reactors; Costs; Furnaces; Heating; High K dielectric materials; High-K gate dielectrics; Inductors; Isothermal processes; Manufacturing processes; Rapid thermal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of
Print_ISBN
0-7803-7465-7
Type
conf
DOI
10.1109/RTP.2002.1039438
Filename
1039438
Link To Document