Validation of an analytical large signal model for AlGaN/GaN HEMTs

Author

Green, B.M. ; Hyungtak Kim ; Chu, K.K. ; Lin, H.S. ; Tilak, V. ; Shealy, J.R. ; Smart, J.A. ; Eastman, L.F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

761

Abstract

An analytical nonlinear model describing AlGaN/GaN HEMTs grown on sapphire substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with DC I-V, S-parameter, 4 GHz time-domain waveforms, and 7 GHz power sweep data show good agreement between the model predictions and measurements.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; time-domain analysis; 4 GHz; 7 GHz; AlGaN-GaN; HEMTs; S-parameter; analytical large signal model; dispersion; model predictions; nonlinear model; output conductance; power sweep data; time-domain waveforms; transconductance; Aluminum gallium nitride; Analytical models; Data mining; Gallium nitride; HEMTs; MODFETs; Predictive models; Scattering parameters; Signal analysis; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863293

Filename

863293