Title :
High temperature electronic systems using silicon semiconductors
Author :
White, C.S. ; Nelms, R.M. ; Johnson, R.W. ; Grzybowski, R.R.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
Many applications exist for high temperature electronic systems. Silicon semiconductors may be utilized in circuits operating below 200/spl deg/C. Some issues in the design and fabrication of electronic circuits for this temperature range are described in this paper. A hybrid version of a zero-voltage-switching solenoid drive circuit is constructed using standard commercial components and subjected to both short-term and long-term temperature tests. In the short-term test, the circuit was characterized from room temperature to 150/spl deg/C. The circuit operated at 150/spl deg/C for 2784 hours in the long-term test. These tests indicate that standard commercial components exist for operation at 150/spl deg/C. The inductor in the circuit was stable with temperature, while the capacitors varied significantly with temperature during the long-term test.
Keywords :
elemental semiconductors; high-temperature electronics; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon; switching circuits; 25 to 150 C; 2784 h; Si; ZVS; capacitors; high-temperature electronic systems; long-term temperature tests; short-term temperature tests; silicon semiconductors; solenoid drive circuit; temperature range; zero-voltage-switching; Aerospace electronics; Capacitance; Capacitors; Circuit testing; Inductors; Silicon; Temperature dependence; Temperature distribution; Temperature sensors; Transformers;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730263