Going green for discrete power diode manufacturers

Author

Tan, Cher Ming ; Sun, Lina ; Wang, Chase

Author_Institution

Sch. of EEE, Nanyang Technol. Univ., Singapore

fYear

2009

fDate

25-27 May 2009

Firstpage

3303

Lastpage

3306

Abstract

Owing to its deep diffusion requirement for discrete power diode of rating above 400 V and 1 A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100degC and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400degC and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.

Keywords

elemental semiconductors; power semiconductor diodes; semiconductor device manufacture; silicon; Si; diffusion requirement; discrete power diode manufacturers; fabrication duration; temperature 400 degC; time 4 hour; Annealing; Capacitance-voltage characteristics; Diodes; Doping; Energy consumption; Fabrication; Furnaces; Manufacturing industries; Temperature; Wafer bonding; energy consumption; junction interface characterization; power diode; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4244-2799-4

Electronic_ISBN

978-1-4244-2800-7

Type

conf

DOI

10.1109/ICIEA.2009.5138814

Filename

5138814