Investigation of flat-pack IGBT reliability

Author

Kirihata, Humiaki ; Takahashi, Yoshikazu ; Wakimoto, Hiroki ; Niino, Fumisato

Author_Institution

Semicond. Device Res. & Dev. Center, Fuji Electr. Co. Ltd., Nagano, Japan

Volume

2

fYear

1998

fDate

12-15 Oct. 1998

Firstpage

1016

Abstract

High power and high reliable IGBTs are used in applications to traction and high voltage converters. We have investigated a flat-pack IGBT, compared with an IGBT module and a GTO, to realize the ruggedness in electrical, thermal and mechanical stresses, and the long term reliability. The thermomechanical behaviors on the Si chip surface are discussed, based on two-dimensional numerical simulation results and power cycling test results.

Keywords

insulated gate bipolar transistors; packaging; power convertors; semiconductor device reliability; thermal stresses; GTO; IGBT module; Si chip surface; electrical stresses; flat-pack IGBT reliability; high voltage converters; long term reliability; mechanical stresses; power cycling test; thermal stresses; thermomechanical behavior; traction converters; two-dimensional numerical simulation; Artificial intelligence; Contacts; Insulated gate bipolar transistors; Packaging; Production facilities; Research and development; Testing; Thermal stresses; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE

Conference_Location

St. Louis, MO, USA

ISSN

0197-2618

Print_ISBN

0-7803-4943-1

Type

conf

DOI

10.1109/IAS.1998.730270

Filename

730270