DocumentCode
2342648
Title
Further improvements in the reliability of IGBT modules
Author
Schütze, Thomas ; Berg, Hermann ; Hierholzer, Martin
Author_Institution
eupec GmbH & Co. KG, Warstein, Germany
Volume
2
fYear
1998
fDate
12-15 Oct. 1998
Firstpage
1022
Abstract
This paper gives a survey of the measures and the resulting improvements of IGBT module reliability reached by eupec during the introduction of IGBT high power modules. The points of improvement are in the areas of: bonding; base plate; partial discharge; and chip characteristics.
Keywords
insulated gate bipolar transistors; modules; partial discharges; power bipolar transistors; power field effect transistors; semiconductor device reliability; IGBT high power modules; IGBT module reliability; IGBT modules; base plate; bonding; chip characteristics; eupec; partial discharge; reliability improvement; Bonding; Corrosion; Failure analysis; Insulated gate bipolar transistors; Multichip modules; Temperature; Testing; Thermal conductivity; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location
St. Louis, MO, USA
ISSN
0197-2618
Print_ISBN
0-7803-4943-1
Type
conf
DOI
10.1109/IAS.1998.730271
Filename
730271
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