Finite element modeling of high power laser diodes

Author

Labudovic, M.

Author_Institution

R&D, Corning Lasertron, Bedford, MA, USA

fYear

2002

fDate

2002

Firstpage

177

Lastpage

182

Abstract

Finite element analysis of heat transfer and residual stress within high power laser diodes is performed. The model addresses both p-side down and p-side up laser diodes mounted on a variety of gold plated diamond heat sinks. In addition, the model is optimized with respect to the dimensions of the diamond film, and the laser diode cavity lengths. Finally, the design and performance of diamond film heat sinks for high performance GaAs and InP laser diodes are discussed. The results demonstrate the superior performance achieved through thermal engineering of the dominant thermal transport path from the laser diode heat source through diamond films to the heat sink.

Keywords

finite element analysis; heat sinks; internal stresses; laser cooling; semiconductor device models; semiconductor device packaging; semiconductor lasers; thermal management (packaging); thermal stresses; Au-C; GaAs; GaAs laser diodes; InP; InP laser diodes; diamond film dimensions; dominant thermal transport path; finite element analysis; finite element modeling; gold plated diamond heat sinks; heat transfer; high power laser diodes; laser diode cavity lengths; laser diode heat source; optimized model; p-side down laser diodes; p-side up laser diodes; residual stress; thermal engineering; Diode lasers; Finite element methods; Gold; Heat engines; Heat sinks; Heat transfer; Optical design; Performance analysis; Residual stresses; Thermal engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of

Print_ISBN

0-7803-7465-7

Type

conf

DOI

10.1109/RTP.2002.1039458

Filename

1039458