Series connection of high voltage IGBT modules

Author

Bruckman, M. ; Sommer, R. ; Fasching, M. ; Sigg, J.

Author_Institution

Siemens AG, Erlangen, Germany

Volume

2

fYear

1998

fDate

12-15 Oct. 1998

Firstpage

1067

Abstract

In this paper experimental and simulation techniques are used to investigate the series connection of high voltage IGBT modules. An experimental setup with a power rating of 6.6 kV and 1200 A is established and used to analyze the circuit behavior in detail. An improved gate driver circuit in combination with an active overvoltage control enables safe operation of the circuit under all conditions. Additionally, the circuit is simulated with the simulation tool SABER using physics-based electro-thermal models for the description of the power semiconductor devices in the circuit. Experimental and simulated data agree very well.

Keywords

circuit simulation; driver circuits; insulated gate bipolar transistors; modules; overvoltage protection; power convertors; voltage control; 1200 A; 6.6 kV; SABER simulation tool; active overvoltage control; circuit behavior analysis; gate driver circuit; high voltage IGBT modules; physics-based electro-thermal models; power rating; power semiconductor devices; safe operation; series connection; simulation; Automation; Circuit simulation; Circuit topology; Driver circuits; Insulated gate bipolar transistors; Inverters; Multichip modules; Power system reliability; Prototypes; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE

Conference_Location

St. Louis, MO, USA

ISSN

0197-2618

Print_ISBN

0-7803-4943-1

Type

conf

DOI

10.1109/IAS.1998.730279

Filename

730279