Title :
Measurement of the reaction rate constant of the SiH radical in silane plasma using an infrared diode laser absorption method
Author :
Goto, Tetsu ; Kato, Kazuhiko ; Itabashi, Naoki ; Nishiwaki ; Yamada, Chikatoshi ; Hirota
Author_Institution :
Dept. of Electron., Nagoya Univ., Japan
Abstract :
Summary Form only given, as follows. In silane plasma, neutral radicals SiH/sub m/ (m=0-3) contribute to the amorphous silicon thin film formation. The authors have determined the reaction rate constant of SiH with SiH/sub 4/ in SiH/sub 4//Ar plasma using an infrared laser absorption method (IRLA). The experimental procedure is briefly described. At 400 K the constant was (3.2+or-0.9)* 10/sup -12/ cm/sup 3/-s/sup -1/.<>
Keywords :
free radicals; plasma diagnostics; reaction rate constants; silicon compounds; spectrochemical analysis; 400 K; SiH; SiH/sub 4/; SiH/sub 4/-Ar; amorphous Si thin film formation; infrared diode laser absorption method; neutral radicals; reaction rate constant; Plasma measurements; Silicon compounds; Spectrochemical analysis;
Conference_Titel :
Plasma Science, 1989. IEEE Conference Record - Abstracts., 1989 IEEE International Conference on
Conference_Location :
Buffalo, NY, USA
DOI :
10.1109/PLASMA.1989.166246
