DocumentCode
2343217
Title
Improvement of deep submicron buried-channel p-MOSFET by As and P co-implantation for punchthrough stopper
Author
Jeonghwan Son ; Sangdon Lee ; Kijae Huh ; Jeongmo Hwang
Author_Institution
ULSI Lab., LG Semicon Co. Ltd., Cheongju, South Korea
fYear
1996
fDate
26-26 June 1996
Firstpage
18
Lastpage
19
Abstract
We have demonstrated the buried-channel p-MOSFET which is co-implanted with As and P ion as a punchthrough stopper. It is confirmed that the short-channel effect and the drive current were significantly improved by using this simple process. It is promising for deep submicron n/sup +/-poly single gate CMOS.
Keywords
MOSFET; arsenic; ion implantation; phosphorus; Si:As,P; co-implantation; deep submicron buried-channel p-MOSFET; drive current; n/sup +/-poly single gate CMOS; punchthrough stopper; short-channel effect; Boron; Breakdown voltage; CMOS process; Degradation; Doping profiles; Fabrication; Impact ionization; Laboratories; MOSFET circuits; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546298
Filename
546298
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