Title :
Improvement of deep submicron buried-channel p-MOSFET by As and P co-implantation for punchthrough stopper
Author :
Jeonghwan Son ; Sangdon Lee ; Kijae Huh ; Jeongmo Hwang
Author_Institution :
ULSI Lab., LG Semicon Co. Ltd., Cheongju, South Korea
Abstract :
We have demonstrated the buried-channel p-MOSFET which is co-implanted with As and P ion as a punchthrough stopper. It is confirmed that the short-channel effect and the drive current were significantly improved by using this simple process. It is promising for deep submicron n/sup +/-poly single gate CMOS.
Keywords :
MOSFET; arsenic; ion implantation; phosphorus; Si:As,P; co-implantation; deep submicron buried-channel p-MOSFET; drive current; n/sup +/-poly single gate CMOS; punchthrough stopper; short-channel effect; Boron; Breakdown voltage; CMOS process; Degradation; Doping profiles; Fabrication; Impact ionization; Laboratories; MOSFET circuits; Ultra large scale integration;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546298
