DocumentCode
2343311
Title
High performance self-aligned SiGe p-type modulation-doped field-effect transistors
Author
Arafa, M. ; Ismail, K. ; Chu, J.O. ; Adesida, J.
Author_Institution
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fYear
1996
fDate
26-26 June 1996
Firstpage
24
Lastpage
25
Abstract
We report on self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a shallow, low thermal-budget ohmic contact and T-shaped gates.
Keywords
Ge-Si alloys; high electron mobility transistors; ohmic contacts; semiconductor materials; semiconductor technology; SiGe; T-shaped gate; fabrication; self-aligned gate p-type SiGe MODFET; shallow ohmic contact; thermal budget; Contact resistance; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; MODFETs; Ohmic contacts; Plasma temperature; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546301
Filename
546301
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