DocumentCode
2344001
Title
Impact and optimization of lithography-aware regular layout in digital circuit design
Author
Bem, Vinícius Dal ; Butzen, Paulo ; Marranghello, Felipe S. ; Reis, André I. ; Ribas, Renato P.
Author_Institution
Grad. Program in Microelectron. (PGMicro), Fed. Univ. of Rio Grande do Sul, Porto Alegre, Brazil
fYear
2011
fDate
9-12 Oct. 2011
Firstpage
279
Lastpage
284
Abstract
Regular fabrics are expected to mitigate manufacturing process variations, increasing fabrication yield in deep sub-micron CMOS technologies. This paper presents an extensive analysis of aspects involved in the optimization of regular fabric (based) designs. The choice of the most efficient regular fabric design strategy depends on the area overhead and circuit performance degradation, which may vary according the fabric pattern optimization possibilities. Yield improvements have to be traded-off against area and performance losses due to regular design rules. This paper evaluates the losses introduced by using regular fabrics. Several benchmark circuits have been mapped over different regular layout templates through specific cell libraries built for this purpose. Results have demonstrated that the design impact is quite manageable by choosing appropriately the fabric pattern or template.
Keywords
CMOS digital integrated circuits; circuit optimisation; integrated circuit layout; lithography; benchmark circuits; cell libraries; circuit performance degradation; deep submicron CMOS technologies; design impact; digital circuit design; fabric pattern optimization; fabrication yield; lithography-aware regular layout; manufacturing process variations; regular fabric design optimization; yield improvements; Benchmark testing; Fabrics; Layout; Libraries; Logic gates; Optimization; Transistors; CMOS digital circuits; Transistor regular layout; layout pattern optimization; lithography-aware design; regular fabric; standard cells; structured ASIC;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Design (ICCD), 2011 IEEE 29th International Conference on
Conference_Location
Amherst, MA
ISSN
1063-6404
Print_ISBN
978-1-4577-1953-0
Type
conf
DOI
10.1109/ICCD.2011.6081409
Filename
6081409
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