DocumentCode
2344623
Title
New applications of focused ion beam technique to failure analysis and process monitoring of VLSI
Author
Nikawa, K. ; Nasu, K. ; Murase, M. ; Kaito, T. ; Adachi, T. ; Inoue, S.
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1989
fDate
11-13 Apr 1989
Firstpage
43
Lastpage
52
Abstract
The applications presented are: (1) microscopic selective cross-sectioning and in situ observation of the cross section; and (2) the observation of aluminum microstructure. These applications make failure analysis techniques simpler and less time-consuming
Keywords
VLSI; failure analysis; integrated circuit testing; ion beam applications; metallisation; Al microstructure; VLSI; failure analysis; focused ion beam technique; in situ cross section observation; microscopic selective cross-sectioning; process monitoring; Apertures; Application software; Computerized monitoring; Condition monitoring; Conductive films; Etching; Failure analysis; Ion beams; Microscopy; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/RELPHY.1989.36316
Filename
36316
Link To Document