Title :
Kinetics of hot carrier effects for circuit simulation
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Experimental results that enable the transformation of shifts in the MOS transistor model parameters obtained from DC hot carrier stress to equivalent shifts due to transient stress during circuit operation are presented. This is necessary for simulating the long-term stability of circuits with respect to hot carrier degradation. Results of further experiments and simulations designed to provide physical insight into transient hot-carrier phenomena are presented
Keywords :
CMOS integrated circuits; hot carriers; insulated gate field effect transistors; integrated circuit technology; semiconductor device models; semiconductor device testing; transients; AC stress; CMOS process technology; DC hot carrier stress; MOS transistor model parameters; circuit simulation; hot carrier degradation; long-term stability; transient stress; Circuit simulation; Condition monitoring; Degradation; Hot carrier effects; Hot carriers; Kinetic theory; MOSFETs; Semiconductor process modeling; Stress; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36323
