HAST applications: acceleration factors and results for VLSI components

Author

Danielson, D. ; Marcyk, G. ; Babb, E. ; Kudva, S.

Author_Institution

Intel Corp., Hillsboro, OR, USA

fYear

1989

fDate

11-13 Apr 1989

Firstpage

114

Lastpage

121

Abstract

Results and acceleration factors between several highly accelerated stress test (HAST) conditions and 85°C/85% relative humidity tests are given for NMOS EPROMs (erasable programmable read-only memories) and CMOS RAMs (random-access memories). Two failure regimes exist in time: the earliest is below 25% cumulative failures and is due to passivation defects; beyond that, failures are due to passivation moisture saturation or wearout. Results are sensitive to device/process, passivation integrity, and test apparatus cleanliness. Failure predictions are dependent on which failure regime is used

Keywords

CMOS integrated circuits; EPROM; MOS integrated circuits; environmental testing; failure analysis; integrated circuit testing; integrated memory circuits; life testing; passivation; random-access storage; CMOS RAMs; NMOS EPROMs; VLSI components; acceleration factors; failure regimes; highly accelerated stress test; passivation defects; passivation moisture saturation; relative humidity tests; wearout; Acceleration; EPROM; Humidity; Life estimation; MOS devices; PROM; Passivation; Stress; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1989. 27th Annual Proceedings., International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/RELPHY.1989.36331

Filename

36331