DocumentCode
2344973
Title
Etching of vias in SiO/sub 2/ with controllable sidewall angles
Author
Carlile ; Houghten
Author_Institution
Arizona Univ., Tucson, AZ, USA
fYear
1989
fDate
0-0 1989
Firstpage
155
Abstract
Summary Form only given, as follows. A technique in which the sidewall angle of a via is controlled by the components of the chemistry is reported. The wafer is
Keywords
amorphous semiconductors; semiconductor technology; silicon compounds; sputter etching; 0.8 micron; 1 micron; SiO/sub 2/; chemistry; chloroform-hexafluoroethane-H/sub 2/-N/sub 2/; controllable sidewall angles; lines; masking; oxide etch rate; polyimide; polymer deposition; selectivity; test pattern; thermal oxide layer; vias; wafer; Amorphous semiconductors; Semiconductor device fabrication; Silicon compounds; Sputter etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1989. IEEE Conference Record - Abstracts., 1989 IEEE International Conference on
Conference_Location
Buffalo, NY, USA
Type
conf
DOI
10.1109/PLASMA.1989.166269
Filename
166269
Link To Document