• DocumentCode
    2344994
  • Title

    Reliability aspects of laser programmable redundancy: infrared vs. green, polysilicon vs. silicide

  • Author

    Chlipala, J.D. ; Scarfone, L.M.

  • Author_Institution
    AT&T Bell Lab., Allentown, PA, USA
  • fYear
    1989
  • fDate
    11-13 Apr 1989
  • Firstpage
    163
  • Lastpage
    170
  • Abstract
    The laser explosion of memory redundancy target links has been simulated and temperature evolution profiles produced. The subsequent analysis suggests the following order starting with the most reliable: (1) polysilicon links with infrared laser; (2a) polysilicon links with green laser; (2b) silicide-polysilicon links with infrared laser; and (3) silicide-polysilicon links with green laser. Lower-melting point silicide (e.g. TiSi2) is shown to hold some advantage over high-melting-point silicide (e.g. TaSi2) as a target material. This advantage, however, is not enough to elevate it over polysilicon links in the reliability rank order
  • Keywords
    integrated circuit technology; integrated memory circuits; laser beam applications; redundancy; reliability; temperature distribution; DRAM; TaSi2; TiSi2; green laser; infrared laser; laser explosion; laser programmable redundancy; memory redundancy target links; polysilicon links; reliability; silicide-polysilicon links; temperature evolution profiles; Absorption; Explosions; Laser modes; Laser theory; Materials reliability; Optical materials; Redundancy; Silicides; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/RELPHY.1989.36339
  • Filename
    36339