DocumentCode
2344994
Title
Reliability aspects of laser programmable redundancy: infrared vs. green, polysilicon vs. silicide
Author
Chlipala, J.D. ; Scarfone, L.M.
Author_Institution
AT&T Bell Lab., Allentown, PA, USA
fYear
1989
fDate
11-13 Apr 1989
Firstpage
163
Lastpage
170
Abstract
The laser explosion of memory redundancy target links has been simulated and temperature evolution profiles produced. The subsequent analysis suggests the following order starting with the most reliable: (1) polysilicon links with infrared laser; (2a) polysilicon links with green laser; (2b) silicide-polysilicon links with infrared laser; and (3) silicide-polysilicon links with green laser. Lower-melting point silicide (e.g. TiSi2) is shown to hold some advantage over high-melting-point silicide (e.g. TaSi2) as a target material. This advantage, however, is not enough to elevate it over polysilicon links in the reliability rank order
Keywords
integrated circuit technology; integrated memory circuits; laser beam applications; redundancy; reliability; temperature distribution; DRAM; TaSi2; TiSi2; green laser; infrared laser; laser explosion; laser programmable redundancy; memory redundancy target links; polysilicon links; reliability; silicide-polysilicon links; temperature evolution profiles; Absorption; Explosions; Laser modes; Laser theory; Materials reliability; Optical materials; Redundancy; Silicides; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/RELPHY.1989.36339
Filename
36339
Link To Document