Title :
p-MOSFET gate current and device degradation
Author :
Ong, Tong-Chern ; Seki, Koichi ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data
Keywords :
hot carriers; insulated gate field effect transistors; life testing; semiconductor device models; semiconductor device testing; AC stress lifetime; DC stress; device degradation; gate current; hot carrier limited device lifetime; model; surface-channel p-MOSFETs; Degradation; Electron traps; Hot carrier effects; Hot carriers; Life estimation; Lifetime estimation; MOSFET circuits; Monitoring; Neodymium; Stress;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36341
