Title :
High performance RF-filters suitable for above IC integration: film bulk-acoustic- resonators (FBAR) on silicon
Author_Institution :
Secure Mobile Solutions, Infineon Technol. AG, Munich, Germany
Abstract :
The fundamentals of bulk-acoustic-wave (BAW) devices and the performance of state-of-the-art film bulk-acoustic-resonator (FBAR) filters is reviewed. The key role that high performance RF-filters play in handset applications is discussed and the benefit of silicon technologies outlined. Key processes in manufacturing of FBARs are briefly reviewed. The appealing simplicity of filter modeling and design is presented. Monolithic integration of "system-on-chip" together with RF-ICs is technically feasible and has been demonstrated. Conditions under which this will commercially make sense as compared to hybrid integration "system-in-package" is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.
Keywords :
acoustic resonator filters; acoustic resonators; bulk acoustic wave devices; radiofrequency filters; radiofrequency integrated circuits; system-on-chip; BAW devices; FBAR filters; FBAR manufacturing; FBAR on silicon; RFIC; above IC monolithic integration; bulk-acoustic-wave devices; film bulk-acoustic-resonators; filter design; filter modeling; handset applications; high performance RF-filters; hybrid integration; system-in-package; system-on-chip; Film bulk acoustic resonators; GSM; Manufacturing; Mobile handsets; Monolithic integrated circuits; Preamplifiers; Radio frequency; Resonator filters; Semiconductor films; Silicon;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249378
