• DocumentCode
    2345153
  • Title

    Electromigration interconnect lifetime under AC and pulse DC stress

  • Author

    Liew, B.K. ; Cheung, N.W. ; Hu, C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California, Univ., Berkeley, CA, USA
  • fYear
    1989
  • fDate
    11-13 Apr 1989
  • Firstpage
    215
  • Lastpage
    219
  • Abstract
    A vacancy relaxation model which predicts the DC lifetime, pulse DC lifetime, and AC lifetime for all waveforms and all frequencies above 10 kHz is proposed. The AC lifetimes of aluminum interconnect are experimentally found to be more than 103 times larger than DC lifetime at the same current density. AC stress lifetimes have the same dependences on current magnitude and temperature, for T⩽300°C, as the DC stress lifetime
  • Keywords
    aluminium; electromigration; life testing; metallisation; AC lifetime; Al; DC lifetime; current density; current magnitude; electromigration interconnect lifetime; pulse DC stress; vacancy relaxation model; Aluminum; Current density; Electromigration; Electrons; Frequency; Integrated circuit interconnections; Predictive models; Pulse circuits; Stress; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/RELPHY.1989.36348
  • Filename
    36348