DocumentCode
2345153
Title
Electromigration interconnect lifetime under AC and pulse DC stress
Author
Liew, B.K. ; Cheung, N.W. ; Hu, C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California, Univ., Berkeley, CA, USA
fYear
1989
fDate
11-13 Apr 1989
Firstpage
215
Lastpage
219
Abstract
A vacancy relaxation model which predicts the DC lifetime, pulse DC lifetime, and AC lifetime for all waveforms and all frequencies above 10 kHz is proposed. The AC lifetimes of aluminum interconnect are experimentally found to be more than 103 times larger than DC lifetime at the same current density. AC stress lifetimes have the same dependences on current magnitude and temperature, for T⩽300°C, as the DC stress lifetime
Keywords
aluminium; electromigration; life testing; metallisation; AC lifetime; Al; DC lifetime; current density; current magnitude; electromigration interconnect lifetime; pulse DC stress; vacancy relaxation model; Aluminum; Current density; Electromigration; Electrons; Frequency; Integrated circuit interconnections; Predictive models; Pulse circuits; Stress; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/RELPHY.1989.36348
Filename
36348
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