DocumentCode :
2345153
Title :
Electromigration interconnect lifetime under AC and pulse DC stress
Author :
Liew, B.K. ; Cheung, N.W. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California, Univ., Berkeley, CA, USA
fYear :
1989
fDate :
11-13 Apr 1989
Firstpage :
215
Lastpage :
219
Abstract :
A vacancy relaxation model which predicts the DC lifetime, pulse DC lifetime, and AC lifetime for all waveforms and all frequencies above 10 kHz is proposed. The AC lifetimes of aluminum interconnect are experimentally found to be more than 103 times larger than DC lifetime at the same current density. AC stress lifetimes have the same dependences on current magnitude and temperature, for T⩽300°C, as the DC stress lifetime
Keywords :
aluminium; electromigration; life testing; metallisation; AC lifetime; Al; DC lifetime; current density; current magnitude; electromigration interconnect lifetime; pulse DC stress; vacancy relaxation model; Aluminum; Current density; Electromigration; Electrons; Frequency; Integrated circuit interconnections; Predictive models; Pulse circuits; Stress; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/RELPHY.1989.36348
Filename :
36348
Link To Document :
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