DocumentCode :
2345195
Title :
The electromigration damage response time and implications for DC and pulsed characterizations
Author :
Suehle, John S. ; Schafft, Harry A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
1989
fDate :
11-13 Apr 1989
Firstpage :
229
Lastpage :
233
Abstract :
A measurement interference for highly accelerated electromigration stress tests is identified. Measurements of the median-time-to-failure, t50 for DC and for pulsed current stress as a function of pulse repetition frequency, reveal that highly accelerated stress tests may overestimate metallization reliability if t 50 is comparable with the response time of the vacancy concentration. Techniques necessary to make reliable wafer-level t 50 measurements are described
Keywords :
electromigration; integrated circuit technology; life testing; metallisation; reliability; DC stress; accelerated electromigration stress tests; electromigration damage response time; measurement interference; median-time-to-failure; metallization reliability; pulse repetition frequency; pulsed current stress; vacancy concentration response time; wafer-level t50 measurements; Current measurement; Delay; Electromigration; Frequency measurement; Interference; Life estimation; Pulse measurements; Stress measurement; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/RELPHY.1989.36350
Filename :
36350
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2345195
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