The electromigration damage response time and implications for DC and pulsed characterizations

Author

Suehle, John S. ; Schafft, Harry A.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1989

fDate

11-13 Apr 1989

Firstpage

229

Lastpage

233

Abstract

A measurement interference for highly accelerated electromigration stress tests is identified. Measurements of the median-time-to-failure, t₅₀ for DC and for pulsed current stress as a function of pulse repetition frequency, reveal that highly accelerated stress tests may overestimate metallization reliability if t ₅₀ is comparable with the response time of the vacancy concentration. Techniques necessary to make reliable wafer-level t ₅₀ measurements are described

Keywords

electromigration; integrated circuit technology; life testing; metallisation; reliability; DC stress; accelerated electromigration stress tests; electromigration damage response time; measurement interference; median-time-to-failure; metallization reliability; pulse repetition frequency; pulsed current stress; vacancy concentration response time; wafer-level t₅₀ measurements; Current measurement; Delay; Electromigration; Frequency measurement; Interference; Life estimation; Pulse measurements; Stress measurement; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1989. 27th Annual Proceedings., International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/RELPHY.1989.36350

Filename

36350