• DocumentCode
    2345345
  • Title

    Analysis of Low Power 1-bit Adder Cells Using Different XOR-XNOR Gates

  • Author

    Deepa ; Sampath, Kumar V.

  • Author_Institution
    Dept. of Electron. & Commun., JSS Acad. of Tech. Educ., Noida, India
  • fYear
    2015
  • fDate
    13-14 Feb. 2015
  • Firstpage
    488
  • Lastpage
    492
  • Abstract
    Addition is the basic arithmetic operation used in many VLSI circuits. Reduction in power dissipation of 1 bit adder cell will improve the performance of most of electronic devices. In this paper, 1 bit adder cells were analyzed with respect to supply voltage, temperature, width and length variation of all transistors in circuits. The 1 bit adders were designed using 10, 8 and 6 transistors using different equations of sum and carry. The adder designs considered in this paper are SERF adder, 13A adder, CLRCL adder, 8T adder and 6T adder. The comparison was done with respect to power, delay and area. The adder designs were checked for their robustness by varying supply voltage and temperature. The simulations were carried using OrCAD PSpice in 180nm technology with 1.8V supply voltage. Simulation results showed that SERF adder has lowest power dissipation of all adders. Delay of Sum signal was lowest in CLRCL adder and delay of Carry signal was lowest in 13A adder. The 6T adder was found to be best when area was considered as it is designed using less number of transistors as compared to all other adder designs. The adder designs can be chosen according to our design considerations.
  • Keywords
    VLSI; adders; circuit CAD; digital arithmetic; integrated circuit design; logic gates; power supply circuits; transistor circuits; 13A adder; 180nm technology; 6T adder; 8T adder; CLRCL adder; OrCAD PSpice; SERF adder; VLSI circuits; XOR-XNOR gates; area; basic arithmetic operation; carry signal; delay; delay-of-sum signal; electronic device performance improvement; low power 1-bit adder cells analysis; power; power dissipation reduction; transistor length variation; transistor supply voltage; transistor temperature; transistor width; Adders; Delays; Inverters; Logic gates; Multiplexing; Power dissipation; Transistors; Complementary Pass transistor Logic (CPL); Complementary and Level Restoring Carry Logic (CLRCL); Pass Transistor Logic (PTL); Static Energy Recovery Full (SERF);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Intelligence & Communication Technology (CICT), 2015 IEEE International Conference on
  • Conference_Location
    Ghaziabad
  • Print_ISBN
    978-1-4799-6022-4
  • Type

    conf

  • DOI
    10.1109/CICT.2015.21
  • Filename
    7078751