Title :
Three dimensional CMOS devices and integrated circuits
Author :
Ieong, Meikei ; Guarini, Kathryn W. ; Chan, Victor ; Bernstein, K. ; Joshi, Rajiv ; Kedzierski, Jakub ; Haensch, Wilfiied
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
Abstract :
Three dimensional devices and, integrated circuits are attractive options for overcoming barriers in device and interconnect scaling, offering an opportunity to continue the CMOS performance trend. This paper reviews the process technology and associated design issues in three dimensional devices and integrated circuits.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit interconnections; 3D CMOS IC; 3D CMOS devices; CMOS performance trend; CMOS process technology; MOSFET devices; interconnect scaling barriers; CMOS integrated circuits; CMOS technology; Delay; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Microelectronics; Research and development; Silicon on insulator technology; Wires;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249391
