High field-effect-mobility a-Si:H TFT based on high deposition-rate materials

Author

Chun-Ying Chen ; Kanicki, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

68

Lastpage

69

Abstract

Summary form only given. The hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobility (/spl mu//sub FE/) of 1.5 cm/sup 2//V/spl middot/s and threshold voltage (V/sub /spl tau//) of 1.9 V have been fabricated using the high deposition-rate plasma-enhanced chemical vapor deposited (PECVD) materials. To the best of our knowledge, this is the highest field-effect mobility ever reported for a-Si:H TFT made from high deposition-rate materials.

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; insulated gate field effect transistors; plasma CVD coatings; silicon; thin film transistors; 1.9 V; PECVD; Si:H; a-Si:H TFT; chemical vapor deposited materials; field-effect-mobility; high deposition-rate materials; hydrogenated amorphous Si; plasma-enhanced CVD; thin-film transistors; threshold voltage; Conducting materials; Conductivity; Etching; Intrusion detection; Optical buffering; Optical films; Optical materials; Photonic band gap; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546317

Filename

546317