Title :
High field-effect-mobility a-Si:H TFT based on high deposition-rate materials
Author :
Chun-Ying Chen ; Kanicki, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. The hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobility (/spl mu//sub FE/) of 1.5 cm/sup 2//V/spl middot/s and threshold voltage (V/sub /spl tau//) of 1.9 V have been fabricated using the high deposition-rate plasma-enhanced chemical vapor deposited (PECVD) materials. To the best of our knowledge, this is the highest field-effect mobility ever reported for a-Si:H TFT made from high deposition-rate materials.
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; insulated gate field effect transistors; plasma CVD coatings; silicon; thin film transistors; 1.9 V; PECVD; Si:H; a-Si:H TFT; chemical vapor deposited materials; field-effect-mobility; high deposition-rate materials; hydrogenated amorphous Si; plasma-enhanced CVD; thin-film transistors; threshold voltage; Conducting materials; Conductivity; Etching; Intrusion detection; Optical buffering; Optical films; Optical materials; Photonic band gap; Thin film transistors; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546317
