DocumentCode
2345709
Title
A C-V examination of the electrically reversible depassivation/passivation mechanism in polycrystalline silicon
Author
Suntharalingam, V. ; Fonash, S.J.
Author_Institution
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear
1996
fDate
26-26 June 1996
Firstpage
74
Lastpage
75
Abstract
Recently, we reported the first observations of an electrically reversible depassivation/passivation phenomenon in hydrogen passivated polycrystalline silicon and presented a model for it based on hydrogen release and drift. Here we show our latest finding obtained in studying the depassivation/passivation phenomenon for an RF-hydrogenated polycrystalline silicon n-channel TFT using high frequency capacitance-voltage characterization.
Keywords
capacitance; elemental semiconductors; passivation; semiconductor technology; silicon; thin film transistors; RF hydrogenation; Si; depassivation; high frequency capacitance-voltage characteristics; n-channel TFT; passivation; polycrystalline silicon; Capacitance; Capacitance-voltage characteristics; Crystallization; Hydrogen; Passivation; Silicon; Stress; Switches; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546320
Filename
546320
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