DocumentCode :
2345730
Title :
Performance limits of organic transistors
Author :
Torsi, L. ; Dodabalapur, A. ; Rothberg, L.J. ; Fung, A.W.P. ; Katz, H.E.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fYear :
1996
fDate :
26-26 June 1996
Firstpage :
78
Lastpage :
79
Abstract :
Field effect transistors with organic active layers are a fascinating new frontier in device physics. Devices have been made by many groups on a variety of substrates, including plastic, with a view to eventually develop low-cost, large-area electronic systems based on such transistor technology. Until recently, very little was known about charge transport phenomena in organic transistor active materials. We describe the results of a series of experiments which elucidate the mechanisms of carrier transport in thin film transistors (TFTs) based on oligothiophenes such as /spl alpha/-sexithiophene (/spl alpha/-6T) and their derivatives such as /spl alpha/,/spl omega/ dihexyl sexithiophene (H6T).
Keywords :
field effect transistors; organic compounds; organic semiconductors; thin film transistors; /spl alpha/,/spl omega/ dihexyl sexithiophene; /spl alpha/-6T; /spl alpha/-sexithiophene; H6T; carrier transport; field effect transistor; oligothiophene; organic transistor; plastic substrate; thin film transistor; Charge carrier density; Crystalline materials; Dielectric materials; Dielectric substrates; Grain boundaries; Organic materials; Phonons; Temperature dependence; Temperature measurement; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
Type :
conf
DOI :
10.1109/DRC.1996.546322
Filename :
546322
Link To Document :
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