Title :
SiGe BiCMOS technology for communication products
Author :
Racanelli, Marco ; Kempf, Paul
Author_Institution :
Jazz Semicond., Newport Beach, CA, USA
Abstract :
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of >200 GHz Ft and Fmax SiGe transistors, integration with generic 0.13 μm CMOS, and the realization of low-cost nodes for the integration of wireless transceivers. Record-breaking wireless and wire-line circuit examples are also provided.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; millimetre wave bipolar transistors; semiconductor materials; semiconductor technology; telecommunication equipment; transceivers; 0.13 micron; 200 GHz; CMOS; SiGe; SiGe BiCMOS technology; SiGe bipolar transistors; communication products; low-cost wireless transceivers; wire-line communication circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Communications technology; Foundries; Germanium silicon alloys; Implants; Silicon germanium; Transceivers; Wireless communication;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249413
