DocumentCode
2345887
Title
1.3 /spl mu/m laser diodes with large spot size and low loss fibre-chip coupling fabricated by standard buried heterostructure laser processes
Author
Bouadma, N. ; Ougazzaden, A. ; Kamoun, F. ; Kazmierski, C. ; Silvestre, L.
Author_Institution
CNET, Bagneux, France
fYear
1996
fDate
26-26 June 1996
Firstpage
94
Lastpage
95
Abstract
We present a simple expanded output mode semiconductor diode laser without spot size transformer. The laser spot size expansion is achieved by decreasing the effective refractive index step between the core and cladding. The major advantage of this approach is that the laser can be fabricated with conventional buried heterostructure technology with no inherent resolution limits and no need for additional sophisticated etching or epitaxial techniques, avoiding any significant cost increase of the laser chip. Moreover, this approach is suitable for mass production. The fabricated LDs show good lasing characteristics and low loss coupling of less than -4.3 dB into a cleaved single mode fibre with good misalignment tolerance.
Keywords
laser beams; optical fabrication; optical fibre couplers; semiconductor lasers; -4.3 dB; 1.3 micron; buried heterostructure technology; fabrication; fibre-chip coupling; loss; misalignment tolerance; refractive index step; semiconductor diode laser; spot size; Costs; Diode lasers; Etching; Fiber lasers; Laser modes; Mass production; Refractive index; Semiconductor diodes; Semiconductor lasers; Transformer cores;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546328
Filename
546328
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