Voltage Profile Improvement Using FACTS Devices: A Comparison between SVC, TCSC and TCPST

Author

Bhaskar, M. Arun ; Subramani, C. ; Kumar, M. Jagdeesh ; Dash, S.S.

Author_Institution

Dept. of EEE, Velammal Engg Coll, Chennai, India

fYear

2009

fDate

27-28 Oct. 2009

Firstpage

890

Lastpage

892

Abstract

If the reactive power of the load is changing rapidly, then a suitable fast response compensator is needed Static VAR Compensator (SVC) thyristor control series compensator (TCSC) and thyristor control phase shift transformer (TCPST) is such a compensator which belongs to FACTS family. The ultimate objective of applying reactive shunt compensation in the line is to improve the voltage profile. The inclusion of the FATCS devices in the circuit improves the reactive power in the line. FACTS are successfully simulated and the results show the voltage profile improvement.

Keywords

flexible AC transmission systems; power transformers; reactive power; thyristors; FACTS devices; reactive power; static VAR compensator thyristor control series compensator; thyristor control phase shift transformer; voltage profile improvement; Capacitance; Inductors; Load flow; Power capacitors; Reactive power; Reactive power control; Static VAr compensators; Thyristors; Upper bound; Voltage control; FACTS; SVC; TCPST; TCSC; Voltage profile improvement; reactive power;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Recent Technologies in Communication and Computing, 2009. ARTCom '09. International Conference on

Conference_Location

Kottayam, Kerala

Print_ISBN

978-1-4244-5104-3

Electronic_ISBN

978-0-7695-3845-7

Type

conf

DOI

10.1109/ARTCom.2009.135

Filename

5328468