DocumentCode
2345995
Title
180nm Sn-doped Ge2Sb2Te5 chalcogenide phase-change memory device for low power, high speed embedded memory for SoC applications
Author
Chen, Y.C. ; Chen, C.T. ; Yu, J.Y. ; Lee, C.Y. ; Chen, C.F. ; Lung, S.L. ; Liu, Rich
Author_Institution
Macronix Int. Co. Ltd, Hsin-Chu, Taiwan
fYear
2003
fDate
21-24 Sept. 2003
Firstpage
395
Lastpage
398
Abstract
A 180 nm phase-change device is developed for embedded SoC memory to replace both DRAM and Flash memories. In order to reduce power consumption, the total volume of the device must be reduced and the programming speed must be increased. The speed of programming and reading of chalcogenide memory devices is investigated. It is discovered that the writing speed of the devices using Ge2Sb2Te5 as the storage media is compromised when the chalcogenide film is ultra thin. With doping of Sn, the writing speed is dramatically increased. The maximum programming time (SET) is reduced from 200 ns to 40 ns and that for RESET from 40 ns to 10 ns. Moreover, the reading speed is also improved as a result of lower resistance.
Keywords
germanium compounds; integrated memory circuits; low-power electronics; random-access storage; semiconductor thin films; system-on-chip; tin; 10 ns; 180 nm; 200 ns; 40 ns; Ge2Sb2Te5:Sn; RESET; SET; SoC; chalcogenide RAM; device programming speed increase; device volume reduction; high speed embedded memory; low power memory; nonvolatile memory; phase-change memory device; reading speed; ultra thin chalcogenide film; writing speed; Amorphous materials; Crystalline materials; Crystallization; Electric resistance; Energy consumption; Phase change memory; Random access memory; Tellurium; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN
0-7803-7842-3
Type
conf
DOI
10.1109/CICC.2003.1249426
Filename
1249426
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