Mid-infrared InSb diode lasers grown by MBE

Because of their small size, high spectral purity, high modulation frequency, ruggedness and long lifetime, semiconductor lasers lend themselves to a large range of electro-optic applications. There is considerable interest in the application of mid-infrared lasers in the areas of remote detection of pollutant and toxic gases, general spectroscopy, eye-safe range finding and secure communications. We have chosen to develop lasers based on InSb, which is the only direct band-gap III-V system for wavelengths in excess of 4 /spl mu/m and for which very high quality epitaxial growth and fabrication techniques exist.