• DocumentCode
    2346150
  • Title

    Arsenic vs. phosphorus emitters for radiation hardened power transistors

  • Author

    Bledsoe, Jerry L.

  • Author_Institution
    Semicond. Products Div., Adv. Product R&D Labs., Motorola, Phoenix, AZ, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    259
  • Lastpage
    261
  • Abstract
    The intent of this work was to determine what type of emitter, either arsenic or phosphorus, would yield a superior radiation tolerance. This was accomplished by fabricating devices of each type with thin heavily doped base and collector regions. All devices were irradiated to a neutron fluence of 3 × 1014n/cm2, 1 MEV equivalent. The results of this investigation did not support the hypothesis that arsenic was superior to phosphorus.
  • Keywords
    arsenic; neutron effects; phosphorus; power transistors; radiation hardening (electronics); As; P; arsenic emitters; devices fabrication; neutron fluence; phosphorus emitters; radiation hardened power transistors; superior radiation tolerance; thin heavily doped base regions; thin heavily doped collector regions; Integrated circuits; Junctions; Neutrons; Power transistors; RNA; Radiation hardening; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219760
  • Filename
    6219760
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2346150