Title :
Recent advances in SiC materials and device technologies in Sweden
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
In Sweden, silicon carbide technology is regarded as one of the prime research areas in microelectronics. The main driving force has been the power generation and power distribution industry and the need for low power loss systems. These needs are expected in part to be covered by replacing Si with SiC devices to utilize blocking voltages of 20 kV, higher temperature operation (300-400°C), lower device losses and higher switching frequencies. The establishment of a state-of-the-art SiC device processing facility in Kista-Stockholm, Sweden by ABB further manifests the thrust towards SiC technology. This paper presents examples of the advances in materials growth technology, characterization, device fabrication results, device modeling and new application areas such as high temperature sensors
Keywords :
high-temperature electronics; power semiconductor devices; power semiconductor switches; semiconductor device models; silicon compounds; temperature sensors; wide band gap semiconductors; 20 kV; 300 to 400 C; SiC; SiC device processing facility; SiC devices; SiC materials; SiC technologies; SiC technology; Sweden; blocking voltage; device fabrication; device losses; device modeling; high temperature sensors; low power loss systems; materials characterization; materials growth technology; microelectronics; operating temperature; power distribution industry; power generation industry; silicon carbide technology; switching frequency; Dielectric materials; Fabrication; Frequency; Gas detectors; Microelectronics; Power distribution; Power generation; Silicon carbide; Temperature sensors; Voltage;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730642
