Title :
A high voltage Dickson charge pump in SOI CMOS
Author :
Hoque, Mohammad R. ; McNutt, Ty ; Zhang, Jimmy ; Mantooth, Alan ; Mojarradi, Mohammad
Author_Institution :
Bell Eng. Center, Arkansas Univ., Fayetteville, AR, USA
Abstract :
An improved charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. An increase in voltage pumping gain for a silicon-on-insulator (SOI) Dickson charge pump is demonstrated when compared with a traditional bulk CMOS Dickson charge pump. A 6-stage Dickson charge pump was designed to produce a 20 V output from a 3.3 V supply, using a 4 MHz, two-phase non-overlapping clock signal driving the charge pump. The design was fabricated in a 0.35 μm partially depleted SOI CMOS process. An efficiency of 72% is achieved at a load current of approximately 20 μA.
Keywords :
CMOS integrated circuits; DC-DC power convertors; semiconductor device models; silicon-on-insulator; 0.35 micron; 20 V; 20 muA; 3.3 V; 4 MHz; 72 percent; Dickson charge pump; MOSFET body diode; SOI CMOS; Si-SiO2; charge transfer switch; high voltage charge pump; two-phase nonoverlapping clock; voltage pumping gain; Charge pumps; Charge transfer; Circuit simulation; Diodes; MOSFET circuits; Semiconductor device modeling; Signal design; Silicon on insulator technology; Switches; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249448
