DocumentCode
2346430
Title
Room temperature CW laser diode at 485 nm
Author
Grillo, D.C. ; Baude, P.F. ; Miller, T.J. ; Law, K.K. ; Haugen, G.M. ; Haase, M.A. ; Buijs, M. ; Haberem, W. ; Shahzad, K.
Author_Institution
Sci. Res. Lab., 3M Co., St Paul, MN, USA
fYear
1996
fDate
26-26 June 1996
Firstpage
100
Lastpage
101
Abstract
Since the first demonstrations of II-VI laser diodes, researchers have been working towards long lifetime room temperature CW devices. In this paper, we report improved room temperature CW lifetime (2.15 minutes) and device performance characteristics at an emission wavelength of 485 nm. The laser structure which was grown by molecular beam epitaxy (MBE) contained (Zn,Mg)(S,Se) cladding and waveguiding layers surrounding a single (Zn,Cd)(S,Se) quantum well.
Keywords
II-VI semiconductors; cadmium compounds; quantum well lasers; zinc compounds; (Zn,Cd)(S,Se) quantum well; 485 nm; II-VI semiconductor; ZnCdSSe-ZnMgSSe; lifetime; room temperature CW laser diode; Density measurement; Diode lasers; Laboratories; Laser theory; Molecular beam epitaxial growth; Quantum well lasers; Stacking; Temperature; Threshold current; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546331
Filename
546331
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