Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

Author

Dessard, V. ; Eggermont, J.-P. ; Flandre, D.

Author_Institution

Lab. Microelectron., Katholieke Univ., Leuven, Belgium

fYear

1998

fDate

22-27 Feb 1998

Firstpage

94

Lastpage

99

Abstract

We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250°C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA

Keywords

1/f noise; MOSFET; high-temperature electronics; operational amplifiers; semiconductor device measurement; semiconductor device noise; semiconductor thin films; silicon-on-insulator; 1/f noise; 250 C; Si-SiO₂; elevated temperature measurements; input noise; integrated input referred noise; low-frequency 1/f noise measurements; low-frequency noise measurements; noise; noise contribution; single stage OTA measurement; thin-film SOI n-MOSFET; thin-film fully-depleted SOI n-MOSFETs; thin-film partially-depleted SOI n-MOSFETs; CMOS technology; Electrical resistance measurement; Low-frequency noise; MOSFET circuits; Noise figure; Noise measurement; Performance evaluation; Temperature measurement; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Temperature Electronic Materials, Devices and Sensors Conference, 1998

Conference_Location

San Diego, CA

Print_ISBN

0-7803-4437-5

Type

conf

DOI

10.1109/HTEMDS.1998.730657

Filename

730657