Recent advances in GaAs devices for use at high temperatures

Author

Würfl, J.

Author_Institution

Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

1998

fDate

22-27 Feb 1998

Firstpage

106

Lastpage

116

Abstract

A review of technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with the high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes, for example, high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results, the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared. The paper closes with a short review of analogue and microwave integrated circuits operating at high temperatures

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; field effect analogue integrated circuits; field effect transistors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; high-temperature electronics; integrated circuit interconnections; integrated circuit metallisation; junction gate field effect transistors; leakage currents; reviews; semiconductor device metallisation; thermal stability; GaAs; GaAs devices; GaAs heterostructures; GaAs high temperature electronic devices; GaAs high temperature integrated circuits; HBTs; HEMTs; HFETs; JFETs; MESFETs; analogue integrated circuits; high temperature related material properties; high temperature stable metallizations; high temperature transistor technologies; microwave integrated circuits; substrate leakage reduction technology; Gallium arsenide; HEMTs; Integrated circuit technology; JFETs; MESFETs; MODFETs; Material properties; Metallization; Microwave transistors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Temperature Electronic Materials, Devices and Sensors Conference, 1998

Conference_Location

San Diego, CA

Print_ISBN

0-7803-4437-5

Type

conf

DOI

10.1109/HTEMDS.1998.730659

Filename

730659